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| UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Collector Current(DC) Collector Current(PULSE) Junction Temperature Storage Temperature *1 : PW10ms,Duty Cycle50% SYMBOL VCBO VCEO VEBO PC Ic Icp *1 Tj TSTG VALUE -600 -600 -7.0 1.0 -1.0 -2.0 150 -55 to +150 UNIT V V V W A A C C ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product SYMBOL ICBO IEBO hFE1*2 hFE2*2 VCE(sat)*2 VBE(sat)*2 fT TEST CONDITIONS VCB= -600V,IE=0 VEB= -7.0V,Ic=0 VCE= -5.0V,Ic= -0.1A VCE= -5.0V,Ic= -0.5A Ic= -0.3A,IB= -0.06A Ic= -0.3A,IB= -0.06A VCE= -10V, IE=0.1A MIN TYP MAX -10 -10 UNIT A A 30 4 58 19 -0.28 -0.85 120 -1.5 -1.2 V V MHz 10 28 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R217-004,A UTC 2SA1627A PARAMETER Output Capacitance Turn-On Time Storage Time Fall Time PNP EPITAXIAL SILICON TRANSISTOR SYMBOL Cob ton tstg tf TEST CONDITIONS VCB= -10V, IE=0, f=1.0MHz Ic =-0.5A,RL=500 IB1= -IB2= -0.1A Vcc =-250V MIN TYP 42 0.1 3.5 0.08 MAX 50 0.5 5.0 0.5 UNIT pF s s s * : Pulsed PW350s,Duty Cycle2% 2 CLASSIFICATION OF hFE1 RANK RANGE M 30-60 L 40-80 K 60-120 TYPICAL CHARACTERISTICS Collector Current vs. Collector to Emitter Voltage IB= 2.0 mA -100 1000 300 hFE -DC Current Gain 100 30 10 3 DC Durrent Gain vs. Collector Current VCE= -5.0V IB=1.8mA IB=1.6mA IB=1.4mA Ic -Collector Current (mA) -80 -60 IB=1.2mA IB=1.0mA -40 IB=0.8mA IB=0.6mA -20 0 0 IB=0.4mA -2.0 IB=0.2mA -4.0 -6.0 -8.0 -10 -0.02 -0.1 -0.2 -0.002 -0.005 -0.01 -0.05 1 -0.5 -1.0 2.0 VCE -Collector to Emitter Voltage (V) Collector Current vs. Base to Emitter Voltage VCE(sat)-Collecotr Saturation Voltage (V) VBE(sat)-Base Saturation Voltage (V) VCE= -5.0V Ic -Collector Current (mA) -0.3 -0.1 Ic -Collector Current (A) Collector And Base Saturation Voltage vs.Collector Current Ic =5IB VBE(sat) -1.0 -3.0 -1.0 -0.3 -0.03 -0.01 -0.1 VcE(sat) -0.003 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 VBE -Base to Emitter Voltage (V) -0.03 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 Ic -Collector Current (A) -0.5 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R217-004,A UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR 100 fT-Gain Bandwidth Product (MHz) 50 20 10 5.0 2.0 1.0 -0.002 -0.005-0.01 -0.02 -0.05 -0.1 -0.2 Ic -Collector Current (mA) Collector Power Dissipation vs.Ambient Temperature Free Air 1.0 0.8 0.6 0.4 0.2 0 Gain Bandwidth Product vs.Collector Current VCB= -5.0V Turn Off Time vs.Collecotr Current Ic /IB =5 VCE= -250V IB1= -IB2 5.0 tsw-Switching Time (S) tstg 2.0 1.0 0.5 0.2 0.1 -0.03 tf -0.1 -0.3 -1.0 Ic -Collector Current (A) Output Capacitance vs.Collecotor To Base Voltage -3.0 200 Cob -Output Capacitance (pF) 100 50 1.2 Pc-Collector Power Dissipation (W) IE=0 20 10 5.0 2.0 -3.0 -100 -300 -10 -30 VCB-Collector to Base Voltage (V) 0 100 125 25 50 75 Ta -Ambient Temperature () 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R217-004,A |
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